IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Drain Current Current regulator Same type as D.
Products may be manufactured jrfp440 one of several qualified locations. Xian and Mingxin actually photo. B, Mar This datasheet is subject to change without notice. Dimension D and E do not include mold flash. Thermal pad contour optional with dimensions D1 and E1. Mold flash shall not irf;440 0. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Lead finish uncontrolled in L1. Except as dtaasheet indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Repetitive rating; pulse width limited by maximum junction temperature see fig.
(PDF) IRFP440 Datasheet download
Case Temperature tr td off tf Fig. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
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IRFP datasheet & applicatoin notes – Datasheet Archive
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Contour of slot optional. Such statements are not binding statements about the suitability of products for a particular application. These dimensions are measured at the outermost extremes of the plastic body. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.